多晶电阻工艺监控与影响因素研究  

Research of Polycrystalline Silicon Resistance Processing Monitor and Influencing Factor

作　　者：张世权[1] 马慧红 吴晓鸫[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2015年第5期33-35,40,共4页Electronics & Packaging

摘　　要：首先介绍了多晶电阻在线监控和工艺控制模块(PCM)监控的两种方法:四探针法和范德堡法,并解决了四探针法在线监控方法多晶电阻波动大的问题;针对生产过程中遇到的多晶电阻偏小问题,通过扫描电镜分析发现多晶晶粒明显偏大,通过对多晶淀积速率的分析确定多晶速率越小,多晶淀积晶粒越大,根据多晶导电理论可知多晶晶粒大,晶粒间界变小,晶粒间界杂质俘获变少,多晶掺杂浓度转化为载流子的比例变高,因此多晶电阻变小。最后根据工程实践列举了影响多晶淀积速率的两大主要因素为多晶淀积温度和多晶炉管维护次数,为保证多晶淀积速率稳定,多晶炉管维护次数尽量少于6次,同时需要对多晶淀积温度进行控制。The paper put forward and makes an overview for two method of testing polycrystalline silicon resistance： four probe method and van der pauw method, which were used in online test and PCM test individually, and then solve the problem of the big fluctuation by four probe test. For production process in the encountered of poly resistance getting small, through the scan electric microscope analysis we found the bigger of crystal grain the smaller of the poly resistance. According to the polycrystalline silicon conductive theory, when the poly grain become lager, the grain boundaries which can capture carrier become smaller, polycrystalline doping concentration into the carrier ratio becomes higher, so the polycrystalline resistance small. According to the engineering practice we found the two leading factors for polycrystalline deposition rate is polycrystalline deposition rate temperature and furnace maintenance number, in order to ensure stable polycrystalline deposition rate, deposition temperature must be controlled and furnace maintenance should be less than 6 times.

关 键 词：多晶电阻 晶粒 淀积速率 四探针法测试电阻 

分 类 号：TN305[电子电信—物理电子学]