高质量N型SiC单晶生长及其器件应用  

Growth and Device Application of High Quality N-type SiC Single Crystals

作　　者：杨祥龙[1] 杨昆[1] 陈秀芳[1] 彭燕[1] 胡小波[1] 徐现刚[1] 李赟[2] 赵志飞[2] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]中国电子科技集团公司第五十五研究所,南京210000

出　　处：《人工晶体学报》2015年第6期1427-1431,共5页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(2015AA031001);国家自然科学基金(51323002)

摘　　要：采用物理气相传输法在(0001)面偏向<11-20>方向4°的籽晶上生长了掺氮低电阻率碳化硅(SiC)单晶。结合碳化硅邻位面生长机制,通过优化温场设计,在近平温场下生长出了晶型稳定、微管密度低、高结晶质量的低电阻率4H-SiC单晶。在加工的"epi-ready"SiC衬底上进行了同质外延,获得了光滑的外延层表面。利用该外延材料研制了600V/10 A SiC肖特基二极管,器件的直流性能与进口衬底结果相当,反向漏电成品率高达67%。另外研制了600 V/50 A SiC肖特基二极管,器件的直流性能也达到了进口衬底水平。Nitrogen-doped low resistivity SiC single crystals were grown on seeds with 4° off-axis towards 11- 20 by the physical vapor transport technique. Based on SiC vicinal face growth mechanism,by the optimization of temperature distribution design,low resistivity 4H-SiC single crystals with stable polytype,low micropipe density and high structural quality was grown under the temperature field with low radial gradient. After homoepitaxial growth on the SiC ＂ epi-ready＂ substrates,smooth surfaces of epitaxial layers were obtained. 600 V /10 A SiC Schottky diodes are made from these epitaxial materials.The DC performance is equal to the results of imported substrates. The yield of reverse leakage current is up to 67%. In addition,600 V /50 A SiC Schottky diodes are developed. The DC performance of these devices reach the level of imported substrates.

关 键 词：碳化硅 物理气相传输 外延 肖特基二极管 

分 类 号：O78[理学—晶体学]