SiN_x介质层非晶IGZO薄膜晶体管的光照稳定性研究  

Illumination Stability of Amorphous Indium Gallium Zinc Oxides Thin Film Transistorswith SiN_x Dielectric Layer

作　　者：崔璨[1] 蔡明谚[2] 张鼎张 张群[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]台湾中山大学理学院物理学系

出　　处：《真空科学与技术学报》2015年第7期807-812,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61071005;61136004);教育部博士点基金项目(20110071110010)

摘　　要：通过对比电特性曲线、阈值电压、亚阈值摆幅等参数的变化趋势,深入分析了低温真空制备的Si Nx介质层非晶铟镓锌氧(a-IGZO)薄膜晶体管(TFT)在光照下的稳定性机理。实验结果表明,器件在光照下的稳定性良好。但如果在施加偏压的过程中同时进行光照,则会伴随有不同程度的电性曲线偏移,具体表现为对正偏压效果的抑制作用和对负偏压效果的促进作用。结合光照在器件的恢复过程中的影响综合分析后认为,光照的主要作用体现在光子对电子空穴对的激发,以及为电子提供能量增加越过势垒的几率。单一的光照影响有限,但在光照与偏压的共同作用下,往往会引起显著的电学性能变化,变化结果符合charge-trapping模型。Here, We addressed the illumination stability of the amorphous indium gallium zinc oxides （a-IGZO） thin film transistor （TFF） with SiNs dielectric layer, fabricated at low temperature in vacuum. The influence of the illumination conditions, including the photon energy emitted by a light emission diode （LED）, bias voltage and polarity, on the stability of the characteristics of the a-IGZO TFF, such as its I-V curve, its threshold voltage, and its subthreshold swings, was ex- perimentally and theoretically investigated. The results show that the white light illumination has a major impact on the bi- ased TIT, but a minor impact on the un-biased TFr. To be specific, the illumination negatively shifts the threshold voltage and increases the subthreshold swings of a negatively biased TFr;whereas the illumination speeds up the recovery from the bias-induced stress of a positively biased TFT, possibly because it partly suppresses the positive bias. The possible mechanisms can be well explained with the charge-trapping model.

关 键 词：IGZO SINX 薄膜晶体管 光照 稳定性 

分 类 号：TN321.5[电子电信—物理电子学]