Mg掺与GaN晶格匹配的InAlN特性研究  

Properties of the Mg doped InAlN lattice-matched to GaN

作　　者：尹以安[1,2] 刘力 章勇[1,2] 郑树文[1,2] 段胜凯 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]广东省光电功能材料与器件工程技术研究中心,广东广州510631

出　　处：《电子元件与材料》2015年第8期22-25,共4页Electronic Components And Materials

基　　金：广州市科技计划资助项目(No.201510010229;No.2014J4100056);广东省科技计划资助项目(No.2013B040402009)

摘　　要：采用蓝宝石图形衬底技术在金属有机物化学气相淀积(MOCVD)系统中制备了Mg掺杂的与GaN晶格匹配的InAlN。通过改变Al源、Mg源的掺杂量和退火温度,研究其对p-InAlN的载流子浓度和晶体质量的影响。实验发现当Al源的流量为2.34μmol/min时,获得与GaN晶格匹配的In0.18Al0.82N,此结果下的样品晶体质量最高。同时发现随着Mg掺杂量的增加会使螺位错密度急剧上升,Mg的掺杂对于刃位错有显著影响。综合退火温度对空穴浓度影响,当Mg源的掺杂量为0.248μmol/min,且退火温度为550℃时,与GaN晶格匹配的p型In0.18Al0.82N样品载流子浓度达到最高值,为1.2×1018 cm–3。Mg-doped InAlN alloy which was lattice-matched to GaN grown on the patterned sapphire substrate was prepared by metal organic chemical vapor deposition （MOCVD） system. The influences of the quantity of Al and Mg sources and annealing temperature on carrier concentration and crystal quality of p-InAlN were investigated. The results show that GaN lattice-matched In0.18Al0.82N with the best crystal quality is obtained under 2.34 μmol/min of Al source flow. Moreover, with the increase of the Cp2Mg flux, the density of the screw dislocation dramatically increases. This indicates the significant effect of Mg-dopant on the density of the edge dislocation. Considering the effect of annealing temperature on hole concentration, it can be found that the carrier concentration of GaN lattice-matched p-In0.18Al0.82N reaches the maximum of 1.2×10^18 cm^–3 under 0.248 μmol/min of Mg source flow and annealing temperature of 550℃.

关 键 词：INALN 蓝宝石图形衬底 MOCVD Mg掺杂InAlN 晶格匹配 退火温度 

分 类 号：TN304[电子电信—物理电子学]