射频磁控溅射制备氮化钽薄膜及微结构和电性能研究  

Synthesis of Tantalum Nitride Coatings with Stable Sheet-Resistance by RF Reactive Magnetron Sputtering

作　　者：张健[1] 巴德纯[1] 赵崇凌[1] 陆涛[1] 

机构地区：[1]东北大学机械及自动化学院,沈阳110004

出　　处：《真空科学与技术学报》2015年第8期975-978,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(50704012);辽宁省博士启动基金资助项目(20061017)

摘　　要：采用自主研发系统,应用反应射频磁控技术,在氧化铝陶瓷样片上制备了方阻稳定性好的Ta N薄膜,研究了氮分压(N2/(N2+Ar))、沉积温度、沉积时间对Ta N膜层结构和电性能的影响,通过X射线衍射、四探针方阻仪器测试了薄膜的微结构和方阻值。结果表明:随氮分压的增大,Ta N薄膜的微结构明显变化,同时Ta N薄膜的方阻也有显著增大趋势;随着沉积温度的提高,Ta N薄膜的方阻有减小趋势,当温度达到400℃时,制备出了方阻小于100Ω/□的薄膜;随着沉积时间的加长,Ta N薄膜的方阻也出现减小的现象;最后制备出工艺稳定性好的方阻50Ω/□的Ta N薄膜。The TaN coatings with stable sheet-resistance were deposited by RF magnetron sputtering on alumina substrate in a lab-built reactor. The influence of the growth conditions,including the N2-partial pressure in N2＋Ar mixture,substrate temperature and deposition time,on the microstructures and sheet-resistance of the TaN coatings was investigated with X-ray diffraction and four-probe resistivity measurement. The results show that the N2-partial pressure,substrate temperature and deposition time strongly affect the growth and sheet-resistance of the TaN coatings. For example,as the N2 partial pressure increased from 4% to 6% and 8%,bcc-TaN0. 04,fcc-TaN1. 13 and amorphous TaN were observed,respectively; and the sheet-resistance rapidly increased. The sheet-resistance decreased to below 100 Ω / □ when the substrate temperature rose up to 400℃. A longer deposition time produced a lower sheet-resistance. The TaN coatings with stable sheet-resistance of 50 Ω / □ were synthesized under the optimized conditions.

关 键 词：射频磁控 TaN薄膜 氮分压 沉积温度 沉积时间 

分 类 号：O484[理学—固体物理] TB43[理学—物理]