短沟道三材料柱状围栅MOSFET的解析模型  

Analytical Models for Short Channel Triple-material Cylindrical Surrounding-gate MOSFETs

作　　者：赵青云[1] 于宝旗 苏丽娜[1] 顾晓峰[1] 

机构地区：[1]轻工过程先进控制教育部重点实验室,江南大学电子工程系,江苏无锡214122

出　　处：《固体电子学研究与进展》2015年第4期311-316,365,共7页Research & Progress of SSE

基　　金：江苏省自然科学基金资助项目(BK2012110);中央高校基本科研业务费专项资金资助项目(JUSRP51323B,JUDCF12032);江苏省普通高校研究生创新计划资助项目(CXLX12_0724);江苏省六大人才高峰资助项目(DZXX-053)

摘　　要：在柱坐标系下利用电势的抛物线近似,求解二维泊松方程得到了短沟道三材料柱状围栅金属氧化物半导体场效应管的中心及表面电势。推导了器件阈值电压、亚阈值区电流和亚阈值摆幅的解析模型,分析了沟道直径、栅氧化层厚度和三栅长度比对阈值电压、亚阈值区电流和亚阈值摆幅的影响。利用Atlas对具有不同结构参数的器件进行了模拟研究和比较分析。结果表明,基于解析模型得到的计算值与模拟值一致,验证了所建模型的准确性,为设计和应用此类新型器件提供了理论基础。The center and surface potentials of short channel triple-material cylindrical surrounding-gate（TMCSG）metal-oxide-semiconductor field effect transistor（MOSFET）were obtained by solving the two-dimensional Possion′s equation with a parabolic approximation of potential in the cylindrical coordinates.Analytical models of the threshold voltage,sub-threshold current and sub-threshold slope were then derived.Based on these models,effects of the channel diameter,gate oxide thickness and length ratio of triple materials on the threshold voltage,subthreshold current and sub-threshold slope were investigated.Finally,devices with different structure parameters were simulated and compared by Atlas.The results from the established analytical models are in good agreement with the simulated results,verifying the validity of these models and providing theoretical supports for designing and applying these novel devices.

关 键 词：三材料柱状围栅金属氧化物半导体场效应管 表面势 阈值电压 亚阈值区电流 亚阈值摆幅 

分 类 号：TN386.1[电子电信—物理电子学]