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作 者:车江波[1] 韩艳[1] 周婷[1] 潘园园[1] 余传杰[1]
机构地区:[1]中国电子科技集团公司第43研究所,合肥230088
出 处:《混合微电子技术》2015年第1期36-40,共5页Hybrid Microelectronics Technology
摘 要:整机电子系统对军用电子元器件的性能、集成密度、体积、功耗的要求越来越高。只有采用SiP结构,才能满足不断增长的功能和性能需求。本文作者提出了一种基于薄膜熟瓷基板的堆叠方式来实现三维基板高密度集成的结构,该叠层基板包括有源、无源器件,这些元器件被安装在叠层表面上和/或被埋置在叠层堆积层结构内,文中对激光打孔、通孔金属化、垂直互联、立体组装等关键技术进行了研究,对几种高性能的基板工艺和薄膜多层HDI基板应用前景做了初步分析,薄膜多层HDI基板是SiP系统级封装新的发展方向。The electronic system has higher and higher requirements on the military electronic component' s performance, in- tegration density, volume and power consumption. Only by using the system -in -package (SiP)structure can satisfy the growing demand of function and performance. In this paper, a stacking ceramic substrate based on thin film is proposed to realize the three - dimensional high density integrated structure. The laminated substrate contains active and passive components. They are buried in laminated surface or in laminated stacking layer structure. The key technologies of laser punching, via metallization, vertical in- terconnection, three - dimensional assembly are studied. The application prospect of high performance substrate process and thin film muhilayer HDI substrate is analyzed, thin film multilayer HDI substrate is a new direction of SiP.
分 类 号:TN305.94[电子电信—物理电子学] TN609
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