拉速对?400mm直拉硅单晶中空洞分布影响的数值模拟  

Simulation of the voids distribution in 400 mm diameter CZ silicon crystal effect by crystal pulling rate

作　　者：于新友[1,2,3] 关小军[1,2] 曾庆凯[4] 王进[1,2] 张向宇[1,2] 

机构地区：[1]山东大学材料科学与工程学院,济南250061 [2]山东大学晶体材料国家重点实验室,济南250100 [3]中国人民解放军第6455工厂,济南250116 [4]山东交通学院航空学院,济南250357

出　　处：《功能材料》2015年第20期20112-20116,共5页Journal of Functional Materials

基　　金：山东大学晶体材料国家重点实验室开放课题资助项目(KF1303)

摘　　要：为了研究拉速对?400mm直拉硅单晶中空洞演变的影响,应用CGSim软件模拟了3种拉速下晶体中空洞演变过程。模拟结果表明,(1)3种拉晶速度下具有相同的空洞分布规律,即随着径向半径增加,晶体心部的空洞密度增大而平均直径减小,该变化趋势随轴向位置远离固液界面而减弱;晶体边缘的空洞密度和平均直径随径向半径增加而减小,直至形成无空洞区,无空洞区域随轴向位置远离固液界面而缩小;(2)随着拉晶速度加快,晶体心部的空洞密度及其平均尺寸相应增大,对应的变化区域基本上向边缘整体平移。A CZ crystal growth process and voids dynamic in 400 mm diameter silicon with three different pulling rate has been simulated by the professional FEM simulation software CGSim.The result show that:(1)with different velocities,the voids distribution in the crystal was similar,namely,at first,the voids density increased and diameter decreased as crystal radial radius increased,and then,the tendency was weakened as the axial position away from the solid-liquid interface,finally,at the edge of the crystal,voids density and diameter decrease along the radial position,and a non-voids area appeared at last,which range reduce as the axial position away from the solid-liquid interface;(2)with the pulling rate increasing,voids density and diameter enlarges at the center of the crystal,and the area move toward the edge.

关 键 词：直拉法 硅单晶 空洞 拉速 数值模拟 

分 类 号：O78[理学—晶体学]