高压LDMOS总剂量辐射效应研究  

Total Dose Radiation Effects Studies of High Voltage LDMOS

作　　者：王丹辉[1] 赵元富[1] 岳素格[1] 边强[1] 莫艳图[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《微电子学与计算机》2015年第10期82-86,共5页Microelectronics & Computer

摘　　要：在太空环境中,辐射会造成电源管理电路严重漏电和性能下降.LDMOS相比于CMOS,具有更高的工作电压,作为大尺寸的功率管被广泛应用于电源管理电路中.针对一种0.25μm BCD工艺LDMOS进行总剂量辐射效应研究.实验表明,总剂量辐射会造成LDMOS的阈值电压漂移,以及N沟道直栅LDMOS的较大漏电流.同时也观察和记录到总剂量辐射导致P沟道直栅LDMOS的漏电.环栅加固方法能有效抑制总剂量辐射引起的N沟道直栅LDMOS的边缘漏电.在100krad(Si)辐照剂量时,N沟道环栅LDMOS和P沟道直栅LDMOS的阈值电压漂移分别为0.02V和-0.02V.In space environment, radiation may induce the leakage and capability degeneration of power management circuits. Compared to CMOS, LDMOS has higher working voltage, so it is widely used as large size power transistors in power management circuits. In this paper , total ionizing dose（TID） radiation effects of LDMOS are studied in a 0. 25 /lm BCD process. TID radiation induces LDMOS threshold voltage shifts and, in n-channel straight gate LDMOS, leakage current. The p-channel straight gate transistor＇s leakage current caused by TID radiation is also observed and recorded. ELT hardening technique can effectively limit the radiation-induced eage leakage of n-channel LDMOS. When radiation dose is 100 krad（Si）, the threshold voltage shifts of n-channel ELT LDMOS and p-channel straight gate LDMOS are respectively 0. 02 V and -0. 02 V.

关 键 词：LDMOS 总剂量辐射 环栅加固 边缘漏电 阈值电压漂移 

分 类 号：TN4[电子电信—微电子学与固体电子学]