深亚微米N沟道MOS晶体管的总剂量效应  

Total Ionizing Dose Effect of Deep Submicron N-Channel MOS Devices

作　　者：文林[1,2,3] 李豫东[1,2] 郭旗[1,2] 孙静[1,2,3] 任迪远[1,2] 崔江维[1,2] 汪波[1,2,3] 玛丽娅[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《微电子学》2015年第5期666-669,共4页Microelectronics

基　　金：国家自然科学基金资助项目(11005152)

摘　　要：为了研究深亚微米工艺CCD的辐射效应特性,了解因器件特征尺寸变小引入的新效应,对0.18μm商用工艺线上流片的不同沟道宽长比的N型沟道MOSFET器件进行了60Co-γ射线辐照实验,这些NMOSFET与CCD内的MOSFET结构相同。分析了辐照后由于总剂量效应导致的NMOSFET参数退化情况以及参数的常温和高温退火行为。实验结果表明,深亚微米工艺器件的辐射耐受性相比大尺寸器件明显增强,不同沟道宽长比的器件表现出的总剂量效应差异显示了器件具有明显的窄沟效应,界面陷阱电荷在新型器件的总剂量效应中起主导作用。研究结果为大面阵CCD的辐射效应研究和辐射加固设计提供了理论支持。Investigation of radiation effect on deep submicron devices was presented. N-channel MOSFET with different channel wide to length ratios was irradiated by ^60Co γ-ray. These devices were manufactured in 0.18 μm commercial process line, and all samples did have the same of lot. Analysis of experiment data implied that the radiation hardness of deep submicron devices enhanced. The difference of total ionizing dose effects at devices with different channel W/L ratios suggested that narrow channel effect by irradiation would affect the process of devices＇ parameters degradation. Irradiation and annealing experiments implied that interface trapped charge dominated the total ionizing dose effect of novel micro and nano devices. The results had supplied theoretical supports for the research of radiation effect on large array CCDs and radiation hardness by design.

关 键 词：深亚微米 NMOSFET 总剂量效应 窄沟效应 

分 类 号：TN386.1[电子电信—物理电子学]