Ku波段宽带氮化镓功率放大器MMIC  

Ku Band Power Amplifier MMIC Based on GaN HEMT Technology

作　　者：余旭明[1,2] 洪伟[1] 王维波 张斌 

机构地区：[1]东南大学毫米波国家重点实验室,江苏南京210096 [2]单片集成电路与模块国家重点实验室,江苏南京210016

出　　处：《电子学报》2015年第9期1859-1863,共5页Acta Electronica Sinica

摘　　要：基于0．25tan栅长GaINHEMT工艺，采用三级放大拓扑结构设计了一款Ku波段Gain功率放大器．放大器设计从建立大信号模型出发，输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗，从而提高整体放大器的功率效率．测试结果表明，该放大器在14．6～18GHz频带内，小信号增益30dB，脉冲饱和输出功率达15W，功率附加效率（PAE）大于32％；在14．8GHz频点处，放大器的峰值功率达19．5W，PAE达39％．该结果表明GaNMMIC具有高频高功率高效率的优势，具有广阔的应用前景．A three stage Ku band GaN power amplifier MMIC was developed with 0.25/an GaN HEMT technology. The MMIC was designed in micro-strip technology. Based on the large signal model, the amplifier adopted reactance matching network to reduce the insertion loss of the output stage, which improved its associated efficiency. The measurement results exhibited that this amplifier provided a fiat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6 - 18GHz frequency range.At 14.8 GHz,a peak output power of 19.5W with power added efficiency of 39% was achieved.

关 键 词：氮化镓 功率放大器 微波集成电路 KU波段 

分 类 号：TN911.23[电子电信—通信与信息系统]