碲镉汞红外焦平面器件表面复合膜层钝化技术  

Passivation Technology of Composite Film on the HgCdTe IRFPA

作　　者：韩福忠[1] 耿松[1] 史琪[1] 袁授章 杨伟声[1] 蒋俊[1] 汤金春[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2015年第10期864-867,共4页Infrared Technology

基　　金：国防基础科研项目

摘　　要：碲镉汞(Hg1-xCdxTe)红外器件的制备过程中,表面钝化工艺对于器件性能具有很大影响。通过实验,研究了溅射功率、靶基距、基片摆动角度等工艺参数对碲镉汞衬底上制备的CdTe/ZnS复合钝化膜层质量的影响。实验结果表明,当CdTe与ZnS溅射靶功率分布为140 W与350 W,靶基距为40cm,基片摆动角度为±30°时,中心2英寸区域膜层非均匀性达到±3%以内,同时钝化膜层表面粗糙度与附着能力获得了较大改善。In the fabrication of the MCT infrared detectors, the HgCdTe passivation process has a profound effect on its performance parameters. In this paper, lots of influencing factors were studied experimentally, such as the sputtering power, distance between target and substrate, movement of substrate, to improve the quality of CdTe/ZnS composite passivation film on the MCT substrate. The results indicated that the film thickness uniformity was better than within ±3% in the center of 2 inch area when the sputtering power of CdTe and ZnS were 140 W and 350 W, the target spacing was 40 cm and the swing angle of the substrate was ±30°, meanwhile, the surface roughness and adhesion ability of the passivation film were improved.

关 键 词：碲镉汞 红外探测器 表面钝化 膜层非均匀性 

分 类 号：TN215[电子电信—物理电子学]