磨料粒径对多层Cu布线CMP的影响  

Effect of the Abrasive Particle Size on the Multilayer Cu Wire CMP

作　　者：武鹏 周建伟[1] 何彦刚[1] 刘玉岭[1] 秦然[1] 张燕[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《微纳电子技术》2015年第11期733-736,共4页Micronanoelectronic Technology

基　　金：国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省青年自然科学基金资助项目(F2012202094);河北工业大学优秀青年科技创新基金资助项目(2013010)

摘　　要：阐述了碱性抛光液中磨料的质量传递作用对多层Cu布线化学机械抛光(CMP)过程中抛光速率和抛光后晶圆表面状态的影响,通过对比不同磨料粒径抛光液在3英寸(1英寸=2.54 cm)铜晶圆上的抛光实验结果,分析了不同磨料粒径抛光液的抛光速率以及抛光后晶圆的表面状态,选择了一种粒径为100 nm、质量分数为3%的磨料,粗抛(P1)的抛光速率达到650 nm/min,抛光后晶圆表面粗糙度由10.5 nm降至2.5 nm,大大提高了抛光后晶圆的表面状态以及平坦化效果,可对多层Cu布线CMP过程中磨料的选择提供一定的参考。The mass transfer effect of the abrasive in the alkaline slurry on the removal rate and surface condition after polishing during the multi-layer Cu wire chemical mechanical polishing（CMP）was presented.By comparing polishing experiment results on 3 inch（1 inch=2.54 cm）copper wafer in the slurries of different abrasive sizes,the removal rate and wafer surface condition after polishing for the slurries of different abrasive sizes were analyzed.An abrasive with the particle size of 100 nm and mass fraction of 3% was used.Under the condition,the removal rate of rough polishing（P1）reaches 650 nm/min,and the wafer surface roughness reduces from10.5 nm to 2.5 nm after polishing,greatly improving the surface state and planarization effect and providing a reference for choosing the abrasive in the multi-layer Cu wire CMP process.

关 键 词：粒径 多层Cu布线 化学机械抛光(CMP) 抛光速率 表面状态 

分 类 号：TN305.2[电子电信—物理电子学]