铁电存储器研究进展  

Development and Research of Ferroelectric Memories

作　　者：周志刚[1] 王耘波[1] 王华[1] 于军[1] 谢基凡[1] 郭冬云[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《信息记录材料》2002年第1期31-35,共5页Information Recording Materials

基　　金：国家自然科学基金(69771024)

摘　　要：铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器,以其高密度、高速度、非易失性以及抗辐射性而大大优于目前任何一种半导体存储器。介绍了铁电存储器的存储原理、特点、基本存储单元、研究进展、应用及存在的问题等。Ferroelectric Memories,which are the combination of ferroelectric films and the semiconductor ICs,have many advantages,such as high density of integration,high speed,the character of anti-radioactivity,over most of the current semiconductor ICs.The basic principles of information storage,characters and the key cell of ferroelectric memories are briefly introduced.The development of the present researches,the applications in information storage realm and the existing problems are also discussed.

关 键 词：铁电存储器 研究进展 铁电薄膜 FRAM FFET 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]