基于InP基HEMTs的W波段高增益低噪声放大MMIC（英文）  

A W-band high-gain and low-noise amplifier MMIC using InP-based HEMTs

作　　者：钟英辉[1] 李凯凯[1] 李新建[1] 金智[2] 

机构地区：[1]郑州大学物理工程学院,郑州450001 [2]中国科学院微电子研究所,北京100029

出　　处：《红外与毫米波学报》2015年第6期668-672,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by National Natural Science Foundation of China(61404115,61434006)

摘　　要：基于自主研发的InP基高电子迁移率晶体管工艺设计并制作了一款W波段单级低噪声放大单片毫米波集成电路.共源共栅拓扑结构和共面波导工艺保证了该低噪声放大器紧凑的面积和高的增益,其芯片面积为900μm×975μm,84~100 GHz频率范围内增益大于10 dB,95 GHz处小信号增益达到最大值为15.2dB.根据调查对比,该单级放大电路芯片具有最高的单级增益和相对高的增益面积比.另外,该放大电路芯片在87.5 GHz处噪声系数为4.3 dB,88.8 GHz处饱和输出功率为8.03 dBm.该低噪声放大器芯片的成功研制对于构建一个W波段信号接收前端具有重要的借鉴意义.In this paper,a single-stage W-band low noise amplifier（ LNA） monolithic millimeter-wave integrated circuit（ MMIC） has been designed and fabricated using our own InP-based high electron mobility transistor technology.The LNA MMIC is developed in Cascode topology and coplanar waveguide technology,which result in a very compact chip with size of 900 μm × 975 μm and a rather high linear gain over 10 dB from 84 GHz to 100 GHz with the maximum value of 15. 2 dB at 95 GHz. To our knowledge,this single-stage LNA MMIC exhibits the highest gain-per-stage and competitive gain-area ratio among reported W-band LNA MMICs. Additionally,the amplifier also demonstrates a relatively low noise figure of 4. 3 dB at 87. 5 GHz and a fairly high saturated output power of 8. 03 dBm at 88. 8 GHz at room temperature. The successful fabrication of LNA MMIC is of great significance on building a W-band signal receiver-front-end system.

关 键 词：高电子迁移率晶体管 低噪声放大电路 磷化铟 共源共栅 

分 类 号：TN432[电子电信—微电子学与固体电子学]