AlGaAs/GaAs HBT基区电流的研究  

Base Current in the AlGaAs/GaAs HBT

作　　者：廖小平[1] 魏同立[1] 

机构地区：[1]东南大学微电子中心

出　　处：《东南大学学报（自然科学版）》1998年第6期34-39,共6页Journal of Southeast University：Natural Science Edition

摘　　要：在ＡｌＧａＡｓ／ＧａＡｓＨＢＴＥＭ模型直流参数的研究基础上，对ＨＢＴ的基区电流进行了研究，特别是针对ＢＥ结空间电荷区的复合电流和基区表面复合电流，因为在ＨＢＴ的小偏置情况下，ＨＢＴ的ＢＥ结空间电荷区的复合电流和基区表面复合电流在整个基区电流中占有主导地位．当ＢＥ结间外加电压为０．５～１．２Ｖ时，ＡｌＧａＡｓ／ＧａＡｓＨＢＴ的基区电流的计算机模拟值和测试值比较接近，这一研究结果有助于进一步了解ＨＢＴ的直流特性和１／ｆ噪声特性．Based on the studying of the AlGaAs/GaAs HBT E M model DC parameters which we have done, the base currents of the HBT are studied, and especially, the B E junction space charge region(SCR) recombination currents and the base surface recombination currents are calculated, which are important components of the base currents at a small DC base. When V be is based between 0.5- 1.2V , the calculations are concordant with the measurements. The result is aided to know the HBT DC characteristics further and to study 1/f noise in the HBT.

关 键 词：基区电流 ALGAAS/GAAS HBT 空间电荷区 基区表面 复合电流 砷化镓晶体管 砷铝镓化合物晶体管 

分 类 号：TN325.3[电子电信—物理电子学]