一种新型的耐高温碳化硅超结晶体管  

A New High-Temperature SiC Super Junction Transistor

作　　者：袁源[1] 王耀洲[1] 谢畅[1] 秦海鸿[1] 

机构地区：[1]南京航空航天大学自动化学院

出　　处：《电子器件》2015年第5期976-979,共4页Chinese Journal of Electron Devices

基　　金：国家级创新训练项目(20141028701703);中央高校基本科研业务费专项资金项目(NO.NZ2013307);教育部博士点基金项目(20123218120017)

摘　　要：对Si C BJT的特性和参数进行了分析研究。以Gene Si C公司的1 200 V/7 A Si C超结晶体管为例,详细阐述了其静态特性、栅极控制特性、动态特性及安全工作区。并与目前商用最好水平的Si-IGBT进行了对比研究。Si C SJT在250℃时开关时间小于15 ns,325℃时漏电流低于100 u A,电流增益高达72,反向偏置安全工作区呈矩形,无二次击穿,具有承受长达22μs短路的能力。以100 k Hz、800 V/7 A下进行开关动作时,Si C SJT与Si C肖特基二极管组合起来的开关损耗,比采用Si IGBT和Si快恢复续流二极管组合的降低64%左右,适合高频工作。The characteristics and parameters of SiC BJT are given. The static characteristics, gate control mode, dy- namic characteristics and safe operation area of the 1 200 V/7 A SiC Super Junction Transistor（SJT）are presented, which are compared with three best-in-class commercial Si IGBTs. Turn-on and turn-off switching transients less than 15 ns at 250℃, low leakage currents less than 100 μA at 325℃, current gain as high as 72, second-break- down-free square RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For switching 7 A and 800 V at 100 kHz, when compared to the best all-Si IGBT ＋ Si diode as free wheeling diode, the SiC SJT＋ SiC Schottky rectifier achieved a power loss reduction of about 64%, which reveal that SiC SJT is very suitable for high frequency operation.

关 键 词：半导体元件 碳化硅超结晶体管 耐高温 低损耗 

分 类 号：TN325.3[电子电信—物理电子学]