InSb红外焦平面器件台面刻蚀工艺研究  

Study of mesa etching for InSb infrared focal plane arrays

作　　者：谭振[1] 亢喆[1] 李海燕[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2016年第1期72-75,共4页Laser & Infrared

摘　　要：传统的湿法腐蚀工艺由于各向同性的特点,象元钻蚀严重,导致器件占空比下降,限制了锑化铟大面阵红外焦平面的发展。基于电感耦合等离子体(ICP)刻蚀技术,以BCl3/Ar为刻蚀气体,研究了不同气体配比、工作压力、RF功率对刻蚀效果的影响,获得了适用于锑化铟焦平面制备工艺的干法刻蚀技术。As the traditional wet etching of InSb has the characteristic of isotropy,there is heavy pixel underetch, which decreases the fill factor and limits the development of large format infrared focal plane array. In this paper, BC13/Ar are chosen as etch gas, and the effects of gas ratio, working pressure, RF power and ICP power on etching effect are studied based on ICP technology. The dry etching technique is obtained for InSb FPA fabrication.

关 键 词：电感耦合等离子体(ICP) 锑化铟 台面刻蚀 刻蚀速率 刻蚀形貌 

分 类 号：TN214[电子电信—物理电子学]