Etching Effect on CMP of Different GaN Layers  

作　　者：Siche Dietmar Rost Hans-Joachim Schulz Tobias Albrecht Martin 

机构地区：[1]Institute of Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany

出　　处：《稀有金属材料与工程》2011年第S3期276-280,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China (50472068, 50721002);National "863" High Technology Research and Development Program of China (2006AA03A145, 2007AA03Z405);National Basic Research Program of China (2009CB930503);The Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (707039)

摘　　要：Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by physical vapor transport. It was found that CMP could reveal the dislocations in GaN surfaces due to a selective etching component. After the optimization of CMP condition, the surface finish improved and the subsurface damage was almost completely removed, demonstrated by atomic force microscopy and an electron back-scattered diffraction technique. This study established the correlation between the dislocation density and film quality. The crystalline perfection and optical properties of GaN layers were characterized by high resolution X-ray diffraction and photoluminescence.Chemical mechanical polishing (CMP) was used to etch various GaN materials, such as GaN layers on sapphire and silicon carbide substrates grown by metal-organic chemical vapor deposition and thick GaN layers grown by physical vapor transport. It was found that CMP could reveal the dislocations in GaN surfaces due to a selective etching component. After the optimization of CMP condition, the surface finish improved and the subsurface damage was almost completely removed, demonstrated by atomic force microscopy and an electron back-scattered diffraction technique. This study established the correlation between the dislocation density and film quality. The crystalline perfection and optical properties of GaN layers were characterized by high resolution X-ray diffraction and photoluminescence.

关 键 词：SURFACE ETCH PITS CMP GAN 

分 类 号：TN305.2[电子电信—物理电子学]