碳化硅门极可关断晶闸管的研究进展  

Research Developments in Silicon Carbide Gate Turn-off Thyristors

作　　者：周才能[1] 岳瑞峰[1] 王燕[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《半导体技术》2016年第2期89-95,共7页Semiconductor Technology

摘　　要：由于SiC材料的理想特性使SiC门极可关断晶闸管(GTO)的发展受到广泛关注。SiC GTO是一种用于控制大电流的高功率开关器件,具有开关速度高、功耗低以及控制电路的复杂程度低等优点,在高压、高温开关电路应用中有着独特的优势。阐述了近十几年来SiC GTO的研究进展,在介绍SiC GTO的等效模型和工作原理的基础上,重点介绍了SiC GTO在阻断电压、传导电流、正向压降和载流子寿命调控等方面的研究现状,详细讨论了提高SiC GTO阻断性能的5种不同的结终端技术和实现载流子寿命调控的具体方法,给出了典型SiC GTO器件的传导电流和正向压降,并对影响CTO性能的主要因素进行了分析。同时,对SiC GTO的未来发展趋势进行了展望。The development of silicon carbide gate turn-off thyristors （SiC GTO） has attracted wide attention due to ideal material characteristic of SiC. SiC GTO, one of the power switch for controlling large current, has primarily been used in high voltage, high temperature switch circuit application for its advantages of high switch speed, low power loss and low complexity of gate circuit. The research deve- lopments of SiC GTO over the past decade are reviewed. The equivalent model and principles of SiC GTO are introduced, and the research status of SiC GTO in breakdown voltage, conducting current, forward voltage drop, and controlling minority carrier lifetime are mainly presented. Five junction termination extension techniques and the method to control minority carrier lifetime are discussed in detail. In addition, the conducting current and forward voltage drop of classic SiC GTO are summarized, and the main factors influencing the performance of the GTO are analyzed. Finally, the development trends of SiC GTO for the future are prospected.

关 键 词：碳化硅 门极可关断晶闸管(GTO) 结终端(JTE) 阻断电压 少子寿命 

分 类 号：TN335[电子电信—物理电子学]