一种新型高压功率器件终端结构的实现  

Implementation of a New High Voltage Power Device Terminal Structure

作　　者：李理 

机构地区：[1]深圳方正微电子,广东深圳518116

出　　处：《半导体技术》2016年第3期215-218,228,共5页Semiconductor Technology

摘　　要：基于实际生产需求,通过软件仿真对一种新型高压功率器件的终端结构进行了优化设计,并制备了性能良好的器件。使用TCAD软件对新型终端的性能进行了仿真,并对终端结构参数进行了优化。仿真结果表明,新结构可以有效缩小终端面积并提高器件的击穿电压。经过生产工艺优化,对采用新型终端结构和传统结构的垂直双扩散场效应晶体管(VDMOS)(650 V)产品分别进行了流片。实测结果表明,采用新型终端结构器件的反向击穿电压为750 V,终端宽度为119μm,产品良率大于90%。与有相同击穿电压采用传统结构的VDMOS相比,其终端宽度缩小50%以上,良率基本相同。Based on the actual production requirements,a new high voltage power device terminal structure was optimized design by the software simulation,and the devices with high performance were prepared. The parameters of the new terminal structure were optimized and simulated using TCAD simulation software. The simulation results show that the new structure can decrease the terminal area and improve the breakdown voltage. After the optimization of the production process,the products were implemented,which adopted the new terminal structure and the traditional structure of vertical double diffusion power MOS（ VDMOS）（ 650 V）. The test results show that the reverse breakdown voltage of the devices with the new terminal structure is 750 V,the width of the terminal structure is 119 μm,and the average yield of the product is more than 90%. Compared to the traditional terminal structure of VDMOS with the same breakdown voltage,the terminal width of the new structure is reduced by 50%,and the yields of the products are the same approximately.

关 键 词：场限环 终端结构 功率器件 击穿电压 垂直双扩散场效应晶体管(VDMOS) 

分 类 号：TN386[电子电信—物理电子学]