溅射功率对In_2S_3薄膜结构及其性能的影响  

Effect of Sputtering Power on Structure and Properties of In_2S_3 Films

作　　者：冀亚欣[1] 王丹[1] 张林基 闫勇[1] 欧玉峰[1] 余洲[1] 刘连[1] 阚香[1] 张勇[1] 赵勇[1,2] 

机构地区：[1]西南交通大学材料先进技术教育部重点实验室,成都610031 [2]新南威尔士大学材料科学与工程学院

出　　处：《半导体光电》2016年第1期63-67,共5页Semiconductor Optoelectronics

基　　金：国家磁约束核聚变能研究专项资助项目(2011GB112001;2013GB110001);国际合作项目(2013DFA51050);国家自然科学基金项目(51271155;51377138;61404109);四川省自然科学基金项目(2011JY0031;2011JY0130)

摘　　要：采用磁控溅射法,在玻璃基底上一步沉积In_2S_3薄膜。研究了溅射功率对In_2S_3薄膜的成分、结构、表面形貌和光电性能的影响。结果表明:所制备的所有薄膜均为β-In_2S_3,无杂相存在,且具有(222)面择优生长特性。溅射功率对薄膜的成分、厚度和结晶度具有明显的影响,并因此影响薄膜的光学和电学性能。薄膜在100W沉积时最接近化学计量比,薄膜的透过率随着溅射功率增大在500nm波段附近显著提高,禁带宽度达到2.45eV,同时电流密度增大两个数量级。In2S3thin films were prepared on Corning glass substrates by radiofrequency magnetron sputtering process by different sputtering power.Properties of the deposited In2S3 films were investigated,such as composition,phase structure,morphology,optical properties and photoconductivity.The results indicated that improvement of film crystallization and optical transmittance at higher sputtering power and films sputtered by 100 W exhibit the best quality.In2S3 thin films have a preferential orientation along the（222）direction and no other phases were observed.The films deposited under 100 W own closest stoichiometric ratio,and the optical transmittance of the film is significantly improved at about 500 nm and the energy band gap comes up to 2.45 eV.The photocurrent density value of In2S3 film by 60 Wsputtering power is smaller than that of other In2S3 samples by two orders of magnitude.

关 键 词：磁控溅射 β-In2S3薄膜 溅射功率 透过率 

分 类 号：O472[理学—半导体物理]