应用于超大规模集成电路工艺的高密度等离子体源研究进展  

Latest Development of High Density Plasma Sources Used in Very-Large-Scale-Integrated Circuits Fabrication

作　　者：王平[1] 杨银堂[1] 徐新艳[1] 杨桂杰[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《真空科学与技术》2002年第4期274-281,共8页Vacuum Science and Technology

基　　金：国防科技预研基金资助项目 (No .99J8.3 .2 .DZ0 13 7) ;教育部"跨世纪优秀人才培养基金"资助项目

摘　　要：本文简要地介绍了等离子体的产生方式以及传统的射频电容耦合等离子体源。对电子回旋共振等离子体(ECR) ,感应耦合等离子体 (ICP) ,螺旋波等离子体 (HWP)等几种新型的高密度等离子体源[1] 的工作原理及结构重点作了分析讨论 ,并从运行参数上对其进行了比较。Plasma generation and the conventional radio frequency (rf) capacitively coupled diode plasma source were briefly discussed.Discussion focuses on the operating principles and structures of the newly developed high density plasma sources,including electron cyclotron resonance (ECR),inductively coupled plasma (ICP) and helicon wave plasma (HWP).Comparisons of the technical specifications of these plasma sources were made.The latest development involving multi polar confinement and plasma induced damages to the devices are also discussed.

关 键 词：超大规模集成电路 研究进展 高密度等离子体源 电子回旋共振 感应耦合等离子体 螺旋波等离子体 生产工艺 

分 类 号：TN405[电子电信—微电子学与固体电子学] O53[理学—等离子体物理]