BST铁电薄膜高频特性的仿真分析研究  

High frequency characteristic of Ba_(1–x)S_xTiO_3 thin film

作　　者：陈明明[1] 张丛春[1] 谢意达 丁桂甫[1] 赵小林[1] 高杨[2] 

机构地区：[1]上海交通大学,电子信息与电气工程学院,薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海200240 [2]中国工程物理研究院,四川绵阳621000

出　　处：《电子元件与材料》2016年第4期29-34,共6页Electronic Components And Materials

基　　金：中物院超精密加工技术重点实验室开放基金资助(No.KF13001)

摘　　要：通过微波软件建模和理论分析方法来分析BST铁电薄膜材料在微波集成电路中的应用,旨在指导器件设计。借助microwave office和Ansoft HFSS&Q3D两个商业软件,构造微带传输线,共面波导传输线,微带低通滤波器和信号串扰等模型,并分析了加入钛酸锶钡(简称BST)薄膜前后各种模型的散射参数(S参数)和群延时。随后,在SiO_2和BST间加入过渡层(LNO,MgO),模拟分析微波元件参数的变化。同时还仿真分析了不同硅衬底厚度和不同BST薄膜厚度情况下的能量延时和S参数。结果表明,由于BST铁电薄膜的高介电常数特性,使得这层薄膜附近的信号线上会产生强烈的信号串扰。最后以共面波导传输线为示例,利用表面微细加工技术制备了共面波导传输线,并利用网络分析仪测试其传输性能,实际测试结果与仿真趋势一致。The microwave characteristics of BST（barium strontium titanium）ferroelectric thin film material were discussed by microwave CAD modeling and theoretical analysis.Micro strip lines,coplanar waveguide（CPW）,low-pass filter and cross-talk model were analyzed by electromagnetic simulation software,microwave office and Ansoft HFSSQ3D.Scattering parameters and their group delay were simulated.In order to compare the properties of the devices directly fabricated on silicon with the one manufactured on silicon with BST thin film as buffer layer,both two models were constructed.Furthermore,group delay and scatter parameters were analyzed when the thickness of the substrate and BST thin film varies.The effects of buffer layer like LNO and Mg O were also discussed.Because of the high dielectric constant,serious crosstalk effect exists between lines.Finally,CPW with BST and without BST were fabricated and their S parameters were measured by net analyzer.The results are in agreement with the simulation.

关 键 词：微波传输 BST薄膜 群延时 S参数 串扰 仿真 

分 类 号：TB34[一般工业技术—材料科学与工程]