一款超宽带低噪声放大器MMIC  

An Ultrawide Band Low Noise Amplifier MMIC

作　　者：李远鹏[1] 魏洪涛[1] 刘永强[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第4期276-279,共4页Semiconductor Technology

摘　　要：基于GaAs PHEMT工艺,采用共源共栅宽带匹配结构,设计制作了1~12 GHz低噪声放大器单片电路。芯片采用双电源供电,可以通过改变栅压实现增益调整。测试结果表明,在1~12GHz频率范围内,增益大于14dB,增益平坦度小于±0.5 dB,噪声系数小于2dB,输入输出回波损耗小于-12d B,1dB压缩点输出功率在1~8 GHz频率范围内大于14d Bm,在1~12GHz频率范围内大于11dBm,芯片漏极采用5V供电,栅极工作电压为-0.5 V,芯片静态工作电流小于30m A。电路具有超宽带、功耗低、噪声系数低等特点,在宽带接收机系统有广泛的应用前景。Based on the GaAs process,a 1- 12 GHz low noise amplifier monolithic circuit was designed and manufactured using the com- source com- gate wideband matching structure. The chip needs two supply voltage,the gain of chip can be adjusted by adjusting the gate voltage. Measurement results show that in the frequency range of 1- 12 GHz,the gain is larger than 14 d B with the gain flatness of less than ± 0. 5 d B,the noise figure is less than 2 d B,the input / output return loss is less than- 12 d B,and the output power at the 1 d B compression point is larger than 11 d Bm. In the frequency range of 1- 8 GHz the output power at the 1 d B compression point is larger than14 d Bm. The quiescent current is less than 30 m A with the drain supply voltage of ＋ 5 V and the gate supply voltage of- 0. 5 V. The circuit features ultrawide band,low power consumption,low noise figure,it is applied widely in broadband receiver system.

关 键 词：GAAS 共源共栅 超宽带 低功耗 低噪声 

分 类 号：TN313[电子电信—物理电子学]