SiC BJT的单电源基极驱动电路研究  

Single-Source Gate Driving Circuit for Si C Bipolar Junction Transistor

作　　者：张英[1] 王耀洲[1] 陈乃铭 徐华娟[1] 秦海鸿[1] 

机构地区：[1]江苏省新能源发电与电能变换重点实验室南京航空航天大学,南京211100

出　　处：《电子器件》2016年第1期26-31,共6页Chinese Journal of Electron Devices

基　　金：国家创新训练项目(20141028701703);中央高校基本科研业务费专项资金项目(NZ2013307);南京航空航天大学青年科技创新基金(理工类)项目(NS2015039)

摘　　要：探究Si C BJT基极驱动电路拓扑,对Si C BJT基极驱动电路损耗的构成进行了分析和对比,提出单基极电阻和阻容网络两种单电源基极驱动方案,对开关速度进行了对比。针对单电源阻容网络驱动方案,对其关键电路参数进行了分析,并针对一款Si C BJT器件给出了优化的参数组合设计结果,实验测试得出驱动1 200 V/6 A Si C BJT驱动损耗为3.85 W,该驱动电路优势明显,并具有进一步优化的空间。The topology of SiC BJT driving circuit is discussed. After analyzing and comparing the constitution of power loss of SiC BJT driving circuit,two single-supply driving circuits were presented,including single resistor and resistor-capacitor network. The switching speed of two driving schemes was compared. Then,for the single-supply resistor-capacitor network,the key circuit parameters were analyzed,and the optimized combinations of driving circuit parameters were given for a 1 200 V/6 A rating SiC BJT. The driving power loss of it is 3.85 W,and it has the space for the further optimization.

关 键 词：电力电子技术 碳化硅双极型晶体管 定量实验 单电源驱动 阻容网络 低损耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]