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作 者:洪姣[1] 牛新环[1] 刘玉岭[1] 王辰伟[1] 孙鸣[1] 高宝红[1] 韩力英[1]
机构地区:[1]河北工业大学电子信息工程学院天津市电子材料与器件重点实验室,天津300130
出 处:《微纳电子技术》2016年第4期255-258,275,共5页Micronanoelectronic Technology
基 金:国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308);河北省教育厅资助科研项目(QN2014208);河北省自然科学基金资助项目(E2013202247);河北省高等学校科学研究项目(Z2014088)
摘 要:主要研究了碱性清洗剂中不同体积分数FA/O型活性剂对SiO_2颗粒沾污去除的影响。由金相显微镜实验可以看出,随着FA/O型活性剂体积分数的增加,SiO_2颗粒沾污去除效果先升高后降低,在体积分数为0.25%时效果最优。由原子力显微镜(AFM)测试实验可以得出,当FA/O型活性剂体积分数为0.25%时铜光片表面粗糙度最小,说明此时SiO_2颗粒沾污得到了有效去除,适当的FA/O型活性剂体积分数能有效提高清洗后铜光片的表面质量。通过扫描电子显微镜(SEM)随机扫描,对SiO_2颗粒沾污进行统计计算,得出当FA/O型活性剂体积分数为0.25%时SiO_2颗粒沾污缺陷占总缺陷的百分比最小,说明FA/O型活性剂可以有效去除化学机械抛光后铜光片表面的SiO_2颗粒沾污。The effects of the FA/O surfactant with different volume fractions on the removal of SiO_2 particle contamination in the alkaline cleaner were mainly studied.The metallographic microscope test shows that the removal efficiency of the SiO_2 particle contamination increases at first and then decreases with the increase of FA/O surfactant volume fraction,and the removal efficiency of the SiO_2 particle contamination is the best when the volume fraction of the FA/O surfactant is 0.25%.The atomic force microscopy(AFM)experiment results show that the surface roughness of the copper blanket wafer is minimum when the volume fraction of the FA/O surfactant is 0.25%,indicating that the SiO_2 particle contamination is effectively removed.The appropriate FA/O surfactant volume fraction can effectively improve the surface quality of the cleaned copper blanket wafer.By random scanning of the scanning electron microscope(SEM)and then calculating the percentage of SiO_2 particle contamination,it is concluded that the percentage of SiO_2 particle contamination defect in the total defects is minimum when the volume fraction of the FA/O surfactant is 0.25%,showing that the FA/O surfactant can effectively remove the SiO_2 particle contamination on the surface of the copper blanket wafer after CMP.
关 键 词:碱性清洗剂 SIO2颗粒 金相显微镜 原子力显微镜(AFM) 扫描电子显微镜(SEM)
分 类 号:TN305.2[电子电信—物理电子学]
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