CF4/ O2混合气体ICP刻蚀4H-SiC工艺研究  

Study of Inductively Coupled Plasma Etching for 4H-SiC by CF_4/O_2 Mixed Gas

作　　者：吴文杰[1] 梁琳[1] 

机构地区：[1]华中科技大学,光学与电子信息学院,湖北武汉430074

出　　处：《电力电子技术》2016年第4期106-108,共3页Power Electronics

基　　金：国家自然科学基金(51377069);台达环境与教育基金会(DREG2013004);中国工程物理研究院脉冲功率科学与技术重点实验室基金(PPLF2013PZ02)~~

摘　　要：感应耦合等离子体(ICP)刻蚀是宽禁带半导体材料4H-SiC加工工艺中的重要环节。采用CF_4/O_2作为刻蚀气体,首次用正交实验的方法系统研究了ICP功率、射频(RF)功率、CF_4流量、O_2流量等工艺参数对4H-SiC材料刻蚀速率的影响,结果表明刻蚀速率随ICP功率和RF功率的增大而增大,随CF_4流量先减小后增大,随O_2流量先增大后减小。在ICP功率为500 W、RF功率为125 W、CF_4和O_2流量分别为15 sccm和22 sccm时,获得最大刻蚀速率213.47 nm/min,同时表面均方根粗糙度仅为0.724 nm,保证了较好的表面质量。Inductively coupled plasma（ICP） etching is an important process for the wide bandgap semiconductor material 4H-SiC.The orthogonal approach is applied firstly to research systematically into the influence of the process parameters, including ICP power, radio frequency （RF） power, CF4 and O2 flow, on the etch rate of 4H-SiC material.The results indicate that the etch rate increases as the ICP power or RF power increases, decreases firstly and then increases with the CF4 flow,and increases firstly and then decreases with the O2 flow.A maximum etch rate of 213.47 nm/ min is acquired with the ICP power of 500 W, RF power of 125 W, CF4 and O2 flow of 15 sccm and 22 sccm respectively,while the surface roughness（RMS） is only 0.724 nm,which showed good surface quality.

关 键 词：感应耦合等离子体刻蚀 刻蚀速率 混合气体 

分 类 号：TM938[电气工程—电力电子与电力传动]