干法刻蚀条件对Mo侧壁角度的影响  

Influence of Dry Etching Conditions on Mo Sidewall Profile

作　　者：田本朗 徐阳[1] 曹家强[1] 杜波[1] 马晋毅[1] 米佳[1] 冷俊林[1] 

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2016年第2期199-202,206,共5页Piezoelectrics & Acoustooptics

摘　　要：该文介绍了F基气体电感耦合等离子体（ICP）干法刻蚀系统对金属Mo薄膜侧壁角度的影响。通过调节ICP干法刻蚀设备的射频功率、ICP离子源功率、腔体气压、SF6及Ar的气体流量等工艺参数,实现了30.3°～51.6°的侧壁倾角,为薄膜体声波谐振器（FBAR）研制工艺提供了有益指导。This paper introduces the influence of fluorine based inductively couple plasma（ICP）dry etching system on Mo film sidewall profile.The process conditions were carefully selected by changing RF power,ICP ion source power,chamber pressure,SF6 and Ar gas flows.The experiment results show that the Mo sidewall profile can be achieved from 30.3°to 51.6°by changing the etching conditions.The results provides a helpful process guideline for fabricating film bulk acoustic resonator（FBAR）devices.

关 键 词：干法刻蚀 气体电感耦合等离子体(ICP) MO 薄膜体声波谐振器(FBAR) 侧壁角度 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]