SiC BMFET开关特性的仿真研究  

Simulation on Switching Characteristics of SiC Bipolar-Mode FET

作　　者：张林[1,2] 谷文萍[1,2] 徐小波[1,2] 李清华[1,2] 高云霞[1,2] 胡笑钏 

机构地区：[1]长安大学电子与控制工程学院 [2]长安大学道路交通检测与装备工程技术研究中心,西安710064

出　　处：《微电子学》2016年第2期285-288,共4页Microelectronics

基　　金：陕西省自然科学基金资助项目(2015JM6357,2014JQ8344);中国博士后科学基金资助项目(2013M542307);西安市科技局资助项目(CXY1441-9)

摘　　要：研究了不同栅电流和负载类型的沟槽注入结构SiC BMFET的开关特性。仿真结果表明,栅区注入的少子集中分布在沟道区域,可以有效提升沟道区域的电导率,也有利于器件的快速开关。当栅电流为10A/cm^2时,器件的开态电阻比单极模式下降低了近30%,开关时间为1.76μs。当负载含电感时,与单极模式相比,双极模式下的开关时间并未明显延长,但电流和电压过冲小得多。Switching characteristics of SiC bipolar-mode field effect transistor（BMFET）was simulated under different gate current and load types.Simulation results showed that minority carriers injected by gate region were concentrated in channel region,which would effectively enhance the channel conductivity,and also reduce the device’s switching time.The on-state resistance had been reduced by nearly 30% compared with that of the unipolar mode,and the switch time was as low as 1.76μs when gate current was 10 A/cm^2.When an inductance was contained in load,the switching time of the device working under bipolar mode was not significantly longer compared with that of the unipolar mode,without obvious current and voltage overshoot.

关 键 词：碳化硅 双极模式 场效应晶体管 开关特性 

分 类 号：TN322.8[电子电信—物理电子学]