射频等离子硫钝化GaAs(100)的表面特性  

RF Sulfur-plasma Passivation of GaAs(100) Surface

作　　者：许留洋[1] 高欣[1] 袁绪泽 夏晓宇[1] 曹曦文 乔忠良[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2016年第5期556-560,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61176048;61177019;61308051);吉林省科技发展计划(20150203007GX;20130206016GX);中物院高能激光重点实验室基金(2014HEL01)资助项目

摘　　要：采用射频等离子方法,对Ga As(100)衬底片表面进行干法硫等离子体钝化,旨在得到性能稳定含硫钝化层。样品经过360℃温度条件下的快速热退火,光致发光(PL)测试表明,钝化后的样品PL强度上升了71%。同时,钝化样品的稳定性测试结果表明,样品放置在实验室空气中30 d,其PL强度未出现明显变化,说明Ga As的等离子体干法硫钝化具有较好的性能稳定性。Sulfur-plasma process was proposed to clean and passivate the surface of（ 100） oriented Ga As wafers for stable sulfur passivation effect. The photoluminescence（ PL） intensity of processed samples with sulfur-plasma had an obvious improvement after 360 ℃ annealing,and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of Ga As surface treated by sulfur-plasma process has good stability.

关 键 词：射频等离子体 光致发光 钝化 GAAS 

分 类 号：TN248.4[电子电信—物理电子学]