基于斜台面工艺的背照式GaN雪崩探测器制备  

Preparation of Back-illuminated Beveled Mesa GaN Avalanche Photodiodes

作　　者：叶嗣荣[1] 周勋[1] 李艳炯[1] 申志辉[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2016年第2期175-177,196,共4页Semiconductor Optoelectronics

摘　　要：对基于斜台面工艺的背照式pin型GaN紫外雪崩探测器制备进行了简要介绍。通过斜台面制作工艺的对比优化研究,完成了GaN紫外雪崩探测器的低损伤斜台面制作,器件测试结果表明,高质量斜台面能够有效抑制雪崩探测器的表面提前击穿,器件暗电流特性优良,获得了超高雪崩增益的GaN紫外雪崩探测器。In this work,the preparation of back-illuminated beveled mesa GaN UV avalanche photodiodes was studied.Based on the research of beveled mesa fabrication technology,high quality beveled mesa was achieved through optimizing the main device processes.I-V characteristic test results prove that beveled mesa can suppress the surface pre-breakdown effectively,furthermore,GaN avalanche photodiodes with low dark current and high internal gain are attained successfully.

关 键 词：GAN 雪崩探测器 背照式 斜台面 

分 类 号：TN929.11[电子电信—通信与信息系统]