低源流量Delta掺杂p型GaN外延薄膜的研究  

Investigation on Low Source Flux Delta Doped p-GaN Flim Grown by MOCVD

作　　者：王凯[1] 邢艳辉[1] 韩军[1] 赵康康[1] 郭立建[1] 于保宁 李影智[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室,北京100124

出　　处：《半导体光电》2016年第2期229-231,237,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61204011;11204009;6107026);国家自然科学基金重点基金项目(U103760);北京市自然科学基金项目(4142005)

摘　　要：利用金属有机物化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN∶Mg薄膜。首先,对Delta掺杂p型GaN的掺杂源流量进行优化研究,研究发现在较低46cm^3/min的CP_2Mg源流量下,晶体质量和导电性能都有所改善,获得了较高空穴浓度,为8.73×10^(17) cm^(-3),(002)和(102)面FWHM分别为245和316arcsec。随后,采用XRD、Hall测试、PL以及AFM研究了在生长过程中加入生长停顿对Delta掺杂p型GaN材料特性的影响,发现加入生长停顿后,样品电学特性、光学特性和晶体质量并未得到改善,反而下降。GaN ∶ Mg films were grown on sapphire by metal-organic chemical vapor deposition.First,the CP_2Mg source flux of delta doped p-type GaN was studied,it is found that,at lower 46cm-3/min CP_2Mg source flux,the crystal quality and conductivity performance can be improved,obtaining higher 8.73×10^17cm^-3 hole concentration.XRD FWHM on（002）and（102）plane are 245 and 316 arcsec,respectively.Then,XRD,Hall test,PL and AFM were used to study the effects on delta doped p-type GaN material characteristic when adding aprepurge step during the growth process,and it is found that electrical,optical properties and crystal quality can not be improved,but decreased,due to the growth interruption.

关 键 词：薄膜 P型GAN Delta掺杂 低源流量 金属有机物化学气相沉积 

分 类 号：O484[理学—固体物理]