反应离子刻蚀损伤对4H-SiC肖特基二极管性能的影响  

Effect of Reactive Ion Etching Damages on the Performances of 4H-SiC Schottky Barrier Diodes

作　　者：郭立建[1] 韩军[1] 邢艳辉[1] 王凯[1] 赵康康[1] 于保宁 

机构地区：[1]北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室,北京100124

出　　处：《半导体技术》2016年第5期384-389,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61204011;11204009);北京市自然科学基金资助项目(4142005);北京市教委能力提升资助项目(PXM2014_014204_07_000018)

摘　　要：通过反应离子刻蚀（RIE）系统地研究了射频功率、压强和气体流量对4H-Si C刻蚀的影响,并进一步研究了刻蚀损伤对金属场板结构4H-Si C肖特基势垒二极管电学性能的影响。研究表明,刻蚀速率和Si C表面形貌都会受到RF功率、压强和刻蚀气体（SF6和O2）流量的影响。在高的RF功率下,观察到在Si C表面形成的刻蚀损伤（凹陷坑和锥形坑）。研究表明,这些刻蚀损伤的形成和Si C材料自身的缺陷有关,而且这些刻蚀损伤的存在会导致Si C肖特基二极管正反向I-V性能发生恶化。在刻蚀损伤严重的情况下,对比正反向I-V测试结果发现,在0～50 V的绝对电压范围内,正向电流甚至远小于反向电流。By the reactive ion etching（ RIE）,the effects of the RF power,pressure and the gas flow on the 4H-Si C etching were studied systematically. The influences of the etching damage on the electrical properties of the Si C Schottky barrier diodes（ SBDs） with metal field plate structure were analyzed. The results show that the etch rate of the 4H-Si C as well as Si C surface morphology are related with process parameters,such as RF power,pressure and the flow of gas（ SF6 and O2）. Etching damages（ the cone-in-pits and pits） generated on the Si C surface at high RF power were observed. The research shows that the etching damages may be caused by the defects in Si C materiel itself. The degradations of both the reverse and forward I-V performances of Si C SBDs were ascribed to the cone-in-pits and pits. Moreover,the absolute value of forward current is even less than that of the reverse counterpart in the absolute value voltage range of 0- 50 V for Si C SBDs with the serions etching damages.

关 键 词：反应离子刻蚀(RIE) 碳化硅(SiC) 肖特基二极管 刻蚀损伤 电流-电压特性 

分 类 号：TN311.7[电子电信—物理电子学]