离子束溅射制备GdF_3光学薄膜沉积速率分布特性  

Deposition rate distribution of GdF_3 optical coating prepared by ion beam sputtering

作　　者：贺健康[1] 张立超[1] 才玺坤[1] 时光[1] 武潇野 梅林[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室超精密光学工程研究中心,吉林长春130033

出　　处：《中国光学》2016年第3期356-363,共8页Chinese Optics

基　　金：国家重大科技专项(02专项)基金资助项目(No.2009ZX02205)~~

摘　　要：本文采用离子束溅射方法制备GdF_3薄膜,并研究其沉积速率分布特征。首先,采用膜厚仪测量得出GdF_3薄膜在行星盘平面的二维沉积速率分布图,通过拟合模型得到二维沉积速率分布公式。其次,分析了束流束压及靶材角度对沉积速率分布特征的影响。最后,以二维沉积速率分布公式为基础,通过计算机编程设计均匀性挡板,并进行膜厚均匀性实验验证。结果表明,沉积速率在水平方向上满足ECS函数分布,在竖直方向上满足标准Gauss分布,拟合公式残差为2.05×10^(-6)。改变离子源的束流和束压,沉积速率分布特征保持不变。而随着靶材角度的增大,Gauss分布的半峰宽值ω逐渐增大,峰值位置x_c逐渐增大,在θ=292°时,GdF_3薄膜的沉积速率最大。通过挡板修调实验,可将270 mm口径平面元件的膜厚均匀性调整为97.9%。The deposition rate distribution of single GdF3 layer deposited by ion beam sputtering （IBS） has been investigated in this paper. First, Two dimension deposition rate distribution of GdF3 thin films are meas- ured by an UV-film thickness measuring instrument, and the expression of two dimension deposition rate distri- bution are obtained by using fitting models. Second, the influence of beam current, beam voltage and the an- gle of target on deposition rate distribution feature is analyzed. Finally, the experiments of thickness uniformity have been carried out using designed mask, based on the expression of two dimension deposition rate. Experi- mental results indicate that the deposition rate in horizontal direction is satisfied with the ECS function. And invertical direction it is satisfied with standard Gauss function. The residual error of fitting expression is 2.05 ×10^-6. The feature of deposition rate distribution remains the same when the beam current and beam voltage are changed. With the increase of the target angle, the value of peak width at half height of Gauss function are in- creased. The peak position is changing, and the maximum of deposition rate can be reached when the target angle is 292°. The thickness uniformity is adjusted to 97.9% for a plane element with radius of 270 mm by u- sing mask.

关 键 词：离子束溅射 光学薄膜 沉积速率 二维拟合 膜厚均匀性 

分 类 号：O484.41[理学—固体物理]