三维生长温度对非故意掺杂GaN外延层性能的影响  

Effect of 3D Growth Temperature on the Performance of Undoped Ga N Epitaxial Layer

作　　者：李小杜 尚林[1,2,3] 朱亚丹[1,2,3] 贾志刚[1,2,3] 梅伏洪[1,2,3] 翟光美[1,2,3] 李学敏[1,2,3] 许并社[1,2,3] 

机构地区：[1]太原理工大学新材料界面科学与工程教育部和山西省重点实验室,太原030024 [2]太原理工大学新材料工程技术研究中心,太原030024 [3]太原理工大学材料科学与工程学院,太原030024

出　　处：《人工晶体学报》2016年第5期1282-1287,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(21471111;61475110;61404089;61504090);山西省基础研究项目(2014011016-6;2014021019-1;2015021103);山西省科技创新重点团队(2012041011)

摘　　要：利用金属有机化学气相沉积(MOCVD)技术在蓝宝石(0001)面上生长GaN外延层,并系统研究了三维生长温度对外延层晶体质量和残余应力的影响机理。利用高分辨X射线衍射仪(HRXRD)、原子力显微镜(AFM)、光致发光光谱仪(PL)和拉曼光谱仪(Raman)分别对外延层的位错密度、表面形貌、发光性能和应力情况进行了分析。当三维生长温度分别为1060℃、1070℃和1080℃时,外延层刃位错密度分别为5.09×108/cm3、3.58×108/cm3和5.56×108/cm3,呈现先减小后增大的现象,而螺位错密度变化不显著,分别为1.06×108/cm3、0.98×108/cm3和1.01×108/cm3,同时外延层残余应力分别为0.86 GPa、0.81 GPa和0.65 GPa,呈现逐渐减小的趋势。这可能是由于三维生长温度不同时,外延层生长模式和弛豫程度发生改变所致。Effects of three-dimensional（3D） growth temperatures on the crystal quality and residual stress of GaN epilayers have been investigated.GaN epilayers were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition（MOCVD） method.Dislocation density,surface morphologies,optical properties and residual stress of Ca N epitaxial layer were have been characterized by highresolution X-ray diffraction（HRXRD）,atomic force microscopy（AFM）,photoluminescence spectroscopy and Raman spectroscopy,respectively.When 3D temperatures of 1060 ℃,1070 ℃ and 1080 ℃ were employed to grow GaN epilayers,edge dislocation densities in GaN samples were calculated to be 5.09 ×10^8/cm^3,3.58 × 10^8/cm^3 and 5.56 × 10^8/cm^3,respectively,showing an initially increasing and thendecreasing trend,while their screw dislocation densities were 1.06 × 10^8/cm^3,0.98 × 10^8/cm^3 and 1.01× 10^8/cm^3,respectively,exhibiting no obvious changes.Moreover,the residual compressive stresses in the GaN samples were 0.86 GPa,0.81 GPa and 0.65 GPa,presenting the monotone decreasing tendency with the increasing of temperature.The difference in crystal quality and residual compressive stress for GaN epilayers grown at different 3D temperatures might be ascribed to the different growth modes and relaxation degree.

关 键 词：GAN 三维生长温度 位错 残余应力 

分 类 号：TN304[电子电信—物理电子学]