一种新型4H-SiC双极结型晶体管的研究  

Research of a Novel 4H-SiC Bipolar Junction Transistor

作　　者：仇坤 倪炜江 牛喜平 梁卫华 陈彤 刘志弘[2] 

机构地区：[1]泰科天润半导体科技(北京)有限公司,北京100192 [2]清华大学,北京100084

出　　处：《微电子学》2016年第3期412-414,418,共4页Microelectronics

摘　　要：研制了一种功率型4H-SiC双极结型晶体管。通过采用深能级降低工艺和一氧化氮退火钝化工艺,提高了电流增益。详细研究了发射极-基极几何结构与电流增益的关系,发现随着发射极线宽或发射极-基极间距的逐渐增加,最大电流增益也逐渐提高并趋于饱和。器件在反向阻断电压1 200V时漏电流为5.7μA。在基极电流为160mA时集电极电流达11A,电流增益达到68。A high power 4H-SiC bipolar junction transistor was manufactured. Deep-level-reduction process and NO annealing passivation process were used to improve the current gain. The influence of the emitter-base geometry on the current gain had been investigated. The maximum current gain was increased and to be saturated while the emitter width or the distance between the emitter and the base was increased. The leakage current was 5.7/μA when the reverse block voltage was 1 200 V. The collector current was 11 A while the base current was 160 mA,so the current gain was 68.

关 键 词：4H-SIC 双极晶体管 电流增益 击穿电压 

分 类 号：TN311.7[电子电信—物理电子学]