不同生长温度对Ga掺杂ZnO透明导电薄膜性能的影响  

The Effect of Growth Temperatures on the Properties of Ga Doped ZnO Transparent Conductive Thin Films

作　　者：龚丽[1] 刘云珍[1] 

机构地区：[1]长沙理工大学物理与电子科学学院,湖南长沙410004

出　　处：《湖南有色金属》2016年第3期60-64,共5页Hunan Nonferrous Metals

基　　金：国家自然科学基金资助项目(51302021);湖南省教育厅基金项目(13C1025)

摘　　要：采用磁控溅射方法在普通载玻片衬底上制备了Ga掺杂的Zn O(GZO)透明导电薄膜,并研究了不同生长温度对GZO透明导电薄膜的结构性能、电学性能及光学性能的影响。制备的GZO透明导电薄膜均沿(002)方向的择优取向生长,薄膜的表面形貌为蠕虫状,表明薄膜内存在较大的残余应力。随着生长温度的升高,GZO薄膜的电阻率先减小后增大,在生长温度为250℃时,薄膜的最低电阻率为1.91×10-3Ωcm。不同生长温度下所制备的GZO薄膜在可见光波段的平均透过率均大于90%,薄膜具有优异的光学特性。Ga doped ZnO transparent conductive thin films were prepared on glass substrates by magnetron sputtering. The effect of different growth temperatures on the structural, electrical and optical properties of GZO transparent conductive films was investigated. The GZO transparent conductive films were with a preferential c - axis orientation. The wormlike morphology of GZO thin films indicates that there is residual stress existing in the thin films. The resistivity of GZO thin films first increases and then decreases with the increasing of the growth temperature. The lowest resistivity is 1.91 × 10 -3Ωcm when the growth temperature was 250 ℃. The transmittance in the visible light of all the films at different growth temperatures is over 90%. The films have the excellent optical properties.

关 键 词：ZNO Ga掺杂 透明导电薄膜 生长温度 磁控溅射法 

分 类 号：O472.4[理学—半导体物理]