TO型封装的真空储能焊密封工艺研究  

Semiconductor Devices TO Vacuum Packaging Based on Discharge Welding

作　　者：黎小刚[1] 许健[1] 

机构地区：[1]中国电子科技集团公司第44研究所,重庆400060

出　　处：《电子与封装》2016年第6期10-13,共4页Electronics & Packaging

摘　　要：研制了一种采用储能焊实现TO型封装半导体器件的真空密封装置。该装置由叠形波纹管、密封圈及气室外壳的配合形成上、下气室,利用磁铁同性相斥原理将待密封的管帽与管座分离及定位,达到抽真空时充分排气的目的。实验探索了TO器件的真空封装工艺,一次压力为0.4 MPa、二次压力为0.6 MPa、充电电压为350 V时封口质量最好。对密封后的器件进行了焊接强度及气密性测试,封口强度高,无漏气现象。In the article, a TO vacuum packaging equipment based on discharge welding is presented. The top and bottom air chambers are formed by V-shaped bellows, sealing rings and the shell of air chambers. Caps and bases to be packaged are separated and positioned by magnet to achieve sufficient air discharge. Experiments shows that the optimal packaging performance is achieved under first pressure of 0.4 MPa, second pressure of 0.6 MPa and charging voltage of 350 V. The soldering strength and air tightness of packaged devices are also tested.

关 键 词：真空封装 储能焊 TO封装 

分 类 号：TN305.94[电子电信—物理电子学]