功率MOSFET器件栅电荷测试与分析  

Test and Analysis of Gate Charge in MOSFET

作　　者：张文涛[1] 皓月兰 

机构地区：[1]中国电子科技集团公司第47研究所,沈阳110032

出　　处：《电子与封装》2016年第6期21-23,共3页Electronics & Packaging

摘　　要：栅电荷是表征功率MOSFET器件动态特性的重要参数之一,其测试结果与时间和频率有关,受分布参数、测试夹具和电路结构等因素影响较大。其参数直接影响器件整体性能,设计不好将导致器件没使用时已击穿甚至损坏,在军用功率MOSFET器件研制生产和使用验收中列为必测参数。随着对MOSFET器件可靠性要求的不断提高,栅电荷的测试重要性凸显。针对目前国内外栅电荷测试现状及存在的问题做了详尽阐述,为国内的栅电荷测试提供一定的参考和指导。Gate charge is one of the most important parameters of MOSFET. The test result of gate charge is mainly subject to time and frequency, and may be affected by distributed parameters, sockets and configurations. The gate charge reflects the overall performance of the component and is a required item in testing military MOSFET components. The increasing strictness of reliability requirements of MOSFET components bring new challenge to gate charge test. The article introduces the present situation and existing problems in gate charge test in the world.

关 键 词：场效应晶体管 栅电荷 测试 可靠性 

分 类 号：TN307[电子电信—物理电子学]