氯基条件下4H-SiC衬底的同质外延生长研究  

Study on Chloride-based Homoepitaxial Growth on 4° Off-axis(0001)4H-SiC Substrate

作　　者：闫果果[1] 张峰[1] 钮应喜 杨霏 刘兴昉[1] 王雷[1] 赵万顺[1] 孙国胜[1,3] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]国网智能电网研究院,北京100192 [3]东莞天域半导体科技有限公司,广东东莞523000

出　　处：《半导体光电》2016年第3期353-357,共5页Semiconductor Optoelectronics

基　　金：国网智能电网研究院项目(SGRI-WD-71-14-004);国家"863"计划项目(2014AA041402);国家自然科学基金项目(61474113;61274007和61574140);北京市自然科学基金项目(4132076和4132074);中国科学院青年创新促进会项目(2012098)

摘　　要：利用课题组自主研发的热壁低压化学气相沉积（HWLPCVD）系统,在朝[11-20]方向偏转4°的（0001）Si面4H-SiC衬底上进行快速同质外延生长,研究了生长温度及氯硅比（Cl/Si比）对外延生长速率的影响机理。研究发现,外延生长速率随生长温度的提高呈线性增加,而Cl/Si比的改变对生长速率的影响不大。文章进一步探究了Cl/Si比对4H-SiC外延层表面缺陷的影响。较低的Cl/Si比（0.4～2）可以减少或消除三角缺陷,Cl/Si比较高（大于5）时,表面质量反而下降,因而,适当的Cl/Si比对于获得表面形貌良好的4H-SiC外延层至关重要。4H-SiC epilayers were grown on 4°off-axis Si face 4H-SiC substrates by a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD）system.In this paper,the effects of growth temperature and Cl/Si ratio on the growth rate of the epilayers were investigated.It is found that the growth rate increases linearly with the increase of growth temperature,while the growth rate is not dependent on Cl/Si ratio.The related mechanism of the temperature and Cl/Si ratio on the growth rate was investigated.The lower Cl/Si ratio（0.4~2）can reduce or eliminate the triangular defect,however,the surface quality deteriorates with much higher Cl/Si ratio（〉5）,thus,appropriate Cl/Si ratio is essential to obtain 4H-SiC epilayers with good morphology surface.

关 键 词：碳化硅 低压化学气相沉积 同质外延 生长温度 

分 类 号：TN304.054[电子电信—物理电子学]