4H-SiC氯基体系外延研究  

Study on the Chloride-based 4H-SiC Epi-layer

作　　者：李哲[1] 鞠涛[1] 钮应喜 王嘉铭 张立国[1] 范亚明[1] 杨霏 张泽洪[1] 张宝顺[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏省苏州市215123 [2]全球能源互联网研究院,北京市昌平区102209

出　　处：《智能电网》2016年第7期649-652,共4页Smart Grid

基　　金：国家电网公司科技项目(SGRI-WD-71-14-004)~~

摘　　要：化学气相沉积法（chemical vapor deposition,CVD）外延碳化硅是其面向高频率及大功率器件应用的关键技术,而传统的无氯体系4H-SiC外延生长速率只能达到5~10μm/h。采用氯基生长工艺,在自主研发的热壁CVD系统中在20μm/h生长速率的条件下外延表面没有硅滴缺陷;研究C/Si比与生长温度对氯基体系外延表面粗糙度的影响,在优化条件下可实现表面粗糙度R_a=0.175 nm;探讨C/Si比对外延层背地掺杂浓度的影响。在所做研究基础上,可期待通过进一步工作以同时实现低的背底掺杂及低的表面粗糙度。Silicon carbide（SiC） epitaxy with chemical vapor deposition（CVD） method is the key technology widely used in high-frequency and high-power devices. The typical growth rate of 4H-SiC epitaxy without Chloride-based precursors is about 5~10 μm/h. In this paper, a self-developed hot wall CVD apparatus was set up for SiC epitaxy, and more than 20 μm/h growth rate of 4H-SiC epitaxy without silicon droplets epi-layer was achieved by adding hydrogen chloride（HCl） precursors. The effects of C/Si ratio and growth temperature on the surface roughness of chloride-based epi-layer were studied, and a surface roughness of R_a=0.175 nm was implemented at an optimized growth condition. The relationship between C/Si ratio and net doping was also discussed. Based on the analysis of experimental results, further study will be expected to achieve low-surface-roughness and low-net-doping at the same time.

关 键 词：碳化硅 外延 化学气相沉积 氯基 

分 类 号：TN304.24[电子电信—物理电子学]