薄膜体声波谐振器有限元仿真与设计  

Finite Element Simulation and Design of Film Bulk Acoustic Wave Resonators

作　　者：杜波[1,2] 马晋毅[2] 蒋欣[1,2] 江洪敏[2] 徐阳[2] 田本朗 金成飞 司美菊[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2016年第4期531-534,共4页Piezoelectrics & Acoustooptics

摘　　要：为了抑制薄膜体声波谐振器的寄生谐振,建立了薄膜体声波谐振器的二、三维有限元模型。通过频率响应仿真,分析了不同电极结构的谐振器在中心频率处的振动位移分布情况和频率响应曲线,评估了不同电极结构对谐振器寄生振动的影响,并完成谐振器电极结构的优化设计,实现了谐振器寄生振动抑制。根据仿真优化结果表明,设计并制作了工作频率在1.873GHz的薄膜体声波谐振器,谐振器插入损耗0.7dB,无明显寄生谐振,对设计进行了验证。In order to suppress the lateral mode resonance of the film bulk acoustic wave resonator（FBAR）, the 2D and 3D finite element models of FBARs were established in this work. The vibration displacement distributions at the central frequency and the frequency response curves of resonators with different resonator electrode structures were analyzed by frequency response simulation. The effects of different electrode structures on the parasitic vibra- tion of the resonators were evaluated. And the lateral mode resonances were suppressed by optimizing the structure of resonator electrode. Based on the simulation results, a film bulk acoustic wave resonator with operating frequency of 1. 873 GHz, insertion loss of 0.7 dB was designed and manufactured. The FBAR had no evident spurious reso- nance and the proposed design was verified.

关 键 词：薄膜体声波谐振器 有限元 寄生振动 频率响应 

分 类 号：TN65[电子电信—电路与系统]