4英寸硅衬底GaN发光二极管  

4 Inch Silicon-Substrate GaN Light-Emitting Diodes

作　　者：袁凤坡[1] 刘波[1] 尹甲运[1] 王波[1] 王静辉[1] 唐景庭[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第8期610-614,共5页Semiconductor Technology

摘　　要：采用金属有机物化学气相沉积(MOCVD)方法,在4英寸(1英寸=2.54 cm)硅(111)衬底上,使用复合Al GaN插入层技术,成功生长出了厚度为4μm无裂纹的GaN基外延层,并在此基础上生长了全结构的发光二极管(LED)外延片。采用喇曼光谱测试和双晶衍射测试表征GaN外延层的应力以及外延层的晶体质量。GaN的喇曼谱峰为568.16 cm^(-1),表面受到的压应力为0.164 7 GPa,由于GaN外延层受到的压应力很小,说明插入Al GaN层之后外延层的应力已经释放。双晶衍射测试得出GaNω(002)的半高宽为320 arcsec。将此外延片制作成功率芯片,芯片尺寸为35 mil×35 mil(1 mil=2.54×10-3cm),封装为白光芯片后,在350 m A下流明效率达到161.1 lm/W,正向开启电压为3.095 V,显色指数为71。Using Al Ga N insert layer technique,a 4 μm crack-free Ga N-based epilayer was successfully grown on the 4-inch Si（ 111） substrate by the metal organic chemical vapor deposition（ MOCVD） method. Then a light-emitting diode（ LED） epilayer of whole structure was grown on this basis. The stress and crystalline quality of the GaN epilayer were characterized by Raman spectrum test and double crystal diffraction test. Raman peaks of GaN is 568. 16 cm^（-1）,and the surface compressive stress is 0. 164 7 GPa after the insertion of Al Ga N layer,which means that the compressive stress of the Ga N epilayer has released because it is very small. The full width of the half maximum（ FWHM） of Ga N ω（ 002） is 320 arcsec by double crystal diffraction test. Furthermore,35 mil × 35 mil（ 1 mil =2. 54 × 10^（-3）cm） power chips were fabricated from epitaxial wafers. After being packaged into white-light chips,the luminous efficiency reaches 161. 1 lm/W,forward turn-on voltage is 3. 095 V,and color rendering index is 71 at 350 m A.

关 键 词：氮化镓 量子阱 发光二极管(LED) 金属有机物化学气相沉积(MOCVD) 喇曼光谱 

分 类 号：TN312.8[电子电信—物理电子学]