pH调节剂对蓝宝石衬底CMP的影响  

Influence of Different p H Regulators on the Sapphire Substrate CMP

作　　者：王建超[1,2] 牛新环[1,2] 李睿琦[1,2] 赵欣[1,2] 

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2016年第8期615-619,共5页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2016ZX02301003-004-007);河北省自然科学基金资助项目(E2013202247;F2015202267)

摘　　要：化学机械抛光(CMP)是固体物质表面超精密加工的重要方法,抛光液的p H值是影响蓝宝石衬底CMP过程中化学反应快慢及材料去除速率和表面粗糙度的重要因素之一。重点研究了不同p H调节剂对蓝宝石衬底去除速率以及表面状态的影响。实验中分别选用了3种p H调节剂:有机碱(大分子螯合剂)、无机碱(KOH)和混合碱,并在相同工艺条件下对蓝宝石衬底进行CMP。实验结果表明:在抛光液p H值为10时,有机碱作为p H调节剂,去除速率为2.6μm/h,表面粗糙度为0.493 nm;无机碱作为p H调节剂时去除速率达到2.9μm/h,表面粗糙度0.336 nm;在混合碱中,螯合剂与固定浓度的KOH比为1∶20(体积比)时,速率为3.23μm/h,表面粗糙度为0.226 nm。用混合碱作为p H调节剂可有效实现蓝宝石衬底的高速去除速率及低表面粗糙度。Chemical mechanical polishing（ CMP） is an important method for solid surface ultraprecision machining,and the p H value of the polishing solution is one of the key factors influencing the chemical reaction speed,the material removal rate and the surface roughness during the sapphire substrate CMP process. The influences of different p H regulators on the sapphire substrate removal rate and surface roughness were studied. Three p H regulators were selected in the experiments,including the macro molecular chelating agent as organic alkali,KOH as inorganic alkali and their mixed alkali. Under the same process conditions,the sapphire substrate CMP process was performed. The experimental results show that with the 10 p H value of the polishing solution and organic alkali as the p H regulator,the removal rate is 2. 6 μm / h and the surface roughness is 0. 493 nm,while the removal rate is 2. 9 μm /h and the surface roughness is 0. 336 nm with inorganic alkali as p H regulator. For the mixed alkali,when the volume ratio of the chelating agent and KOH solution is 1∶ 20,the removal rate is 3. 23 μm /h and the surface roughness is 0. 226 nm. Using the mixed alkali as the p H regulator can meet the industry request of high removal rate and low surface roughness for sapphire substrates.

关 键 词：蓝宝石 化学机械抛光(CMP) 去除速率 p H调节剂 混合碱 

分 类 号：TN305.2[电子电信—物理电子学]