薄膜晶体管中高性能HfO_2的低温制备研究  

Fabrication of Thin Film Transistor with High Performance HfO_2 Coatings Synthesized at Low Temperature

作　　者：陶瑞强 姚日晖[1] 朱峰[1] 胡诗犇 刘贤哲 曾勇[1] 陈建秋[1] 郑泽科[1] 蔡炜[1] 宁洪龙[1] 徐苗[1] 兰林锋[1] 王磊[1] 彭俊彪[1] 

机构地区：[1]高分子光电材料与器件研究所发光材料与器件国家重点实验室华南理工大学材料科学与工程学院,广州510640

出　　处：《真空科学与技术学报》2016年第8期862-865,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(973)(2015CB655004);广东省自然科学基金资助项目(2016A030313459);广东省科技计划(2014B090915004;2016B090907001;2014A040401014;2016B090906002;2015A010101323;2014B090916002;2015A010101323;2015B090915001和2015B090914003);广东省教育厅项目(2014KZDXM010和2015KTSCX003);广东省引进创新科研团队计划(201101C0105067115);中央高校基本科研业务费专项资金(2015ZP024和2015ZZ063)资助

摘　　要：采用电子束蒸镀在ITO上沉积Hf O2,研究了不同退火工艺对其电学性能的影响。当450℃时O2退火,Hf O2的漏电迅速增加,通过X射线衍射发现Hf O2有单斜相等结晶生成。450℃下N2退火,Hf O2结构则没有明显晶体和晶界结构,且N2气氛退火的Hf O2漏电约为O2气氛退火的1/10。The Hf O_2 coating,synthesized by electron beam evaporation and annealed in O_2 or N_2atmosphere on the ITO-coated glass substrate was used as the grid dielectric material in fabrication of thin film transistor（ TFT）. The influence of the thickness and annealing atmosphere,on the phase-structures and electrical properties of the Hf O2 coatings was investigated with X-ray diffraction. The results show that the annealing strongly affects the microstructures and electrical properties. For example,annealed at 450 ℃ for 30 min in O_2,the leakage current sharply increased,possibly because the boundaries between the monoclinic,cubic and orthorhombic-phased grains resulted in the formation of leakage channel. In contrast,an annealing in N_2 inhabited such grain-boundary formation and crystallization,reducing the leakage current by more than 10 times. We suggest that the Hf O_2 film be a promising TFT grid material because of its high dielectric constant and low leakage current.

关 键 词：氧化铪 栅介质层 电子束蒸镀 退火 薄膜晶体管 

分 类 号：TB383[一般工业技术—材料科学与工程]