大高宽比微纳结构制备关键技术  

Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

作　　者：赵健[1,2] 董连和[1] 朱效立[2] 谢常青[2] 陈宝钦[2] 史佩雄 

机构地区：[1]长春理工大学光电工程学院,长春130022 [2]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [3]丹麦工业大学DANCHIP实验室

出　　处：《微纳电子技术》2016年第10期685-690,共6页Micronanoelectronic Technology

基　　金：国家青年科学基金资助项目(61308078)

摘　　要：利用HSQ具有的高分辨率、高反差和低边缘粗糙度等突出的优点并通过大量的工艺实验,摸索出电子束曝光剂量、显影液配比、显影时间和显影温度等优化条件,对电子束曝光剂量与线条宽度的关系进行了探索,有效消除了由于散射电子和背散射电子产生的电子束曝光邻近效应的影响;通过显影液掺适量氯化钠的溶液配比的显影技术有效提高了图形对比度并且分析了氯化钠与HSQ的作用机理;利用二氧化碳超临界干燥法来抑制气液界面毛细管表面张力作用导致的抗蚀剂结构的坍塌和粘连。实验得到了高宽比为12∶1、侧壁陡直性良好的大面积密集纳米结构。The HSQ has the advantages of high resolution,high contrast and low edge roughness.Through a lot of process experiments,the optimization conditions of the electron beam exposure dose,the proportion of the developer,the developing time and the developing temperature were explored.The relationship between electron beam exposure dose and line width was explored.The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated.Through adding appropriate NaCl in the conventional developer,the graphic contrast was improved effectively.The mechanism of action between NaCl and HSQ was analyzed.The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method.Large-area dense nano-structures with the aspect ratio of 12∶1 and good steep sidewalls were obtained.

关 键 词：HSQ 电子束光刻 抗蚀剂工艺 CO2超临界干燥 大高宽比结构 

分 类 号：TN305.7[电子电信—物理电子学]