面向高性能GaN基功率电子的器件物理研究  

Device physics towards high performance GaN-based power electronics

作　　者：黄森[1] 杨树[2] 唐智凯 化梦媛 王鑫华[1] 魏珂[1] 包琦龙[1] 刘新宇[1] 陈敬[2] 

机构地区：[1]中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京100029 [2]香港科技大学电子及计算机工程学系,香港999077

出　　处：《中国科学：物理学、力学、天文学》2016年第10期84-99,共16页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：中国科学院微电子器件与集成技术重点实验室课题基金;国家自然科学基金(编号:61474138;61534007;61527816;61404163);香港研究资助局优配研究项目(编号:611512;16207115);香港创新科技基金项目(编号:ITS/192/14FP)资助

摘　　要：氮化镓(GaN)功率电子器件具有高击穿电压、高工作频率、高电流输出能力以及耐高温等优点,有望成为下一代高效电源管理系统芯片的最佳候选之一.本文从界面态起源、极化能带工程以及可靠性机理等角度分析了GaN基功率电子器件所面临的器件物理挑战,包括栅极阈值不稳定性、高压动态导通电阻退化、高阈值栅技术和栅介质长期可靠性等关键科学问题和技术瓶颈.分析指出(Al)GaN表面的无序氧化可能是GaN基器件表/界面态的主要来源,并有针对性地介绍了界面氮化插入层、极性等离子增强原子层沉积AlN薄膜(Plasma-Enhanced Atomic Layer Deposited AlN,PEALD-AlN)钝化、F离子注入与高温栅槽刻蚀增强型技术,以及低压化学气相沉积SiNx(Low-Pressure Chemical Vapor Deposited SiNx,LPCVD-SiNx)和O3-Al2O3高绝缘栅介质等提高GaN基增强型器件性能的新型工艺技术.系统分析了国际有关高性能GaN功率电子器件研究的最新进展,及未来面临的机遇和挑战.Gallium-nitride-based power electronic devices, with the inherent high breakdown voltage, high working frequency,high output current density and high temperature operating capability, are promising candidates for next-generation high-efficiency and compact power management systems. In this work, the scientific and technical challenges towards high-performance GaN power devices, including threshold voltage instability, dynamic ON-resistance degradation,enhancement-mode gate techniques and long-term reliability of gate dielectrics, are investigated based on in-depth analysis of the physical origin of interface states and high-voltage current collapse. Oxidation of（Al） GaN surface are suggested to be the primary cause for the surface/interface states in GaN-based power devices. State-of-the-art device technologies, including nitridation-interficial-layer to suppress dielectric/（Al） GaN interface oxidation, polarized PEALD-AlN passivation for compensation of deep interface states, E-mode techniques of fluorine plasma ion implantation and high-temperature low-damage gate-recess, high-breakdown-strength LPCVD-SiNx and O3-sourced ALD-Al2O3 gate dielectrics are introduced for fabrication of high performance and reliability GaN-based power electronic devices.

关 键 词：氮化镓 功率电子器件 界面态 动态导通电阻 增强型 栅介质 可靠性 

分 类 号：TN303[电子电信—物理电子学]