垂直式MOCVD中生长参数对GaN材料生长的影响  

Effect of growth parameters on GaN in a vertical MOCVD reactor

作　　者：冯兰胜[1] 过润秋[1] 张进成[2] FENG Lansheng GUO Runqiu ZHANG Jincheng(School of Mechano-electronic Engineering, Xidian Univ., Xi＇an 710071, China School of Microelectronics, Xidian Univ., Xi＇an 710071, China)

机构地区：[1]西安电子科技大学机电工程学院,陕西西安710071 [2]西安电子科技大学微电子学院,陕西西安710071

出　　处：《西安电子科技大学学报》2016年第5期178-182,共5页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61334002);国家重大科技专项资助项目(2011ZX01002-001)

摘　　要：为了更好地研究GaN材料生长过程,笔者对一种垂直喷淋式金属有机物化学气相淀积系统生长GaN材料过程中反应物的传递和反应过程进行了模拟.模拟结果表明,反应室压力和进入反应室的气流速度对GaN的生长速率和厚度均匀性均有影响.随着反应气体进入反应室的速度升高,反应室内预反应会增强,GaN生长速率升高,同时GaN厚度的不均匀性也会升高;在同样的进气速率下,反应室压强减小,可在一定范围内提高GaN生长速率,但同时增加衬底中央区域厚度,导致厚度不均匀增加.A simulation of reactants in the transfer and reaction process during the GaN growth in a vertical MOCVD reactor is presented, The results show that the GaN growth rate and thickness uniformity are all affected by the chamber pressure and the velocity of reactants into the chamber. With the increasing velocity of reactants into the chamber, pre-reaction will be enhanced, GaN growth rate will be increased and thickness uniformity decreased. With the inlet velocity remaining the same and chamber pressure decreasing, the growth rate is improved within a certain scope, but the thickness uniformity may be increased at the same time with the thickness of the central region of the substrate increased.

关 键 词：GAN 金属有机物化学气相淀积 生长速率 反应动力学 

分 类 号：TN204[电子电信—物理电子学]