基于MOCVD再生长n_+ GaN欧姆接触工艺f_T/f_(max)>150/210 GHz的AlGaN/GaN HFETs器件研究（英文）  

f_T/f_(max)>150/210 GHz AlGaN/GaN HFETs with regrown n^+-GaN Ohmic contacts by MOCVD

作　　者：吕元杰[1] 冯志红[1] 宋旭波[1] 张志荣[1] 谭鑫[1] 郭红雨[1] 房玉龙[1] 周幸叶 蔡树军[1] 

机构地区：[1]河北半导体研究所专用集成电路国家级重点实验室,河北石家庄050051

出　　处：《红外与毫米波学报》2016年第5期534-537,568,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61306113)

摘　　要：基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的AlGaN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工艺制备了60 nm T型栅.由于器件尺寸的缩小,在Vgs=2 V下,器件最大饱和电流(Ids)达到2.0 A/mm,该值为AlGaN/GaN HFETs器件直流测试下的最高值,器件峰值跨导达到608 mS/mm.小信号测试表明,器件fT和fmax最高值分别达到152 GHz和219 GHz.Scaled AlGaN/GaN heterostructure field-effect transistors （HFETs） with a high unity current gain cut- off frequency （fT） and maximum oscillation frequency （fmax） were fabricated and characterised on an SiC substrate. In the device, the source-to-drain distance （Lsd） was scaled to 600 nm using regrown n^＋ -GaN Ohmic contacts. In addition, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A recorded drain saturation current density （ Ids ） of 2.0 A/mm at Vgs = 2 V and a peak extrinsic transconductance （gm ） of 608 mS/mm were obtained in the scaled AlGaN/GaN HFETs. Moreover, in the devices with a 60-nm T-shaped gate, the maximum values of fT and fmax reached 152 and 219 GHz, respectively.

关 键 词：ALGAN/GAN 异质结场效应晶体管 电流增益截止频率 最大振荡频率 再生长欧姆接触 

分 类 号：TN385[电子电信—物理电子学]